Características Principales
- N–Channel Enhancement Mode MOSFET.
- Low Thermal Resistance.
- Guaranteed Performance at 150 MHz, 28 V: Output power = 80 W, Gain = 11 dB (13 dB Typ.), Efficiency = 55% min. (60% Typ.).
- Nitride Passivated Die for Enhanced Reliability.
- Ruggedness Tested at Rated Output Power.
- Excellent Thermal Stability, Suite for Class A Operation.
- Low Noise Figure — 1.5 dB (Typ.)p at 2.0 A, 150 MHz.
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