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Transistor RF, MACOM - MRF173

Ref: MRF173 Categoría:

Características Principales

  • N–Channel Enhancement Mode MOSFET.
  • Low Thermal Resistance.
  • Guaranteed Performance at 150 MHz, 28 V: Output power = 80 W, Gain = 11 dB (13 dB Typ.), Efficiency = 55% min. (60% Typ.).
  • Nitride Passivated Die for Enhanced Reliability.
  • Ruggedness Tested at Rated Output Power.
  • Excellent Thermal Stability, Suite for Class A Operation.
  • Low Noise Figure — 1.5 dB (Typ.)p at 2.0 A, 150 MHz.

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