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Características Principales
- High drain–source avalanche energy absorption capability.
- Unmatched input and output allowing wide frequency range utilization.
- Device can be used single–ended or in a push–pull configuration.
- Characterized from 30 to 50 V for ease of use.
- Suitable for linear application.
- Integrated ESD protection with greater negative gate–source voltage range for improved Class C operation.
- Recommended driver: MRFE6VS25N (25 W).
- Lower thermal resistance part available: MRF1K50N.
- Included in NXP product longevity program with assured supply for a minimum of 15 years after launch.
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